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Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics

Published

Author(s)

Safak Sayan, Nhan V. Nguyen, James R. Ehrstein, James J. Chambers, Mark R. Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel

Abstract

We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction band offests by 1.20 +- 0.1 and 0.33 +- 0.05eV, respectively.
Citation
Applied Physics Letters
Volume
87

Keywords

band gap, band offset, hafnium silicate, hafnium-silicon oxynitride, high-K dielectric, soft x-ray photoemission, x-ray absorption spectroscopy

Citation

Sayan, S. , Nguyen, N. , Ehrstein, J. , Chambers, J. , Visokay, M. , Quevedo-Lopez, M. , Colombo, L. , Yoder, T. , Levin, I. , Fischer, D. , Paunescu, M. , Celik, O. and Garfunkel, E. (2005), Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32000 (Accessed April 24, 2024)
Created November 22, 2005, Updated January 27, 2020