Sayan, S.
, Nguyen, N.
, Ehrstein, J.
, Chambers, J.
, Visokay, M.
, Quevedo-Lopez, M.
, Colombo, L.
, Yoder, T.
, Levin, I.
, Fischer, D.
, Paunescu, M.
, Celik, O.
and Garfunkel, E.
(2005),
Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32000
(Accessed January 12, 2025)
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Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Published
Author(s)
, , , James J. Chambers, Mark R. Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, , Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract
We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction band offests by 1.20 +- 0.1 and 0.33 +- 0.05eV, respectively.Citation
Applied Physics Letters
Volume
87
Pub Type
Journals
Download Paper
Keywords
band gap, band offset, hafnium silicate, hafnium-silicon oxynitride, high-K dielectric, soft x-ray photoemission, x-ray absorption spectroscopy
Citation
Issues
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Created November 22, 2005, Updated January 27, 2020