Effect of AIN Encapsulate in High-Temperature Annealing on Ion-Implanted SiC as Characterized by SIMS
P Chi, E Handy, M V. Rao
Silicon carbide has been intensively studied due to its chemical and thermal stability and its wide band-gap characteristics that make this material attractive for high power, high speed, and high temperature device applications. At one time the doping of the silicon carbide crystals was restricted to the in-situ method. recently the ion implantation technique has been used to introduce the dopants into silicon carbide crystals at room temperature. Post-implantation annealing is needed to repair the crystalline damage and to activate the implanted species. However, the high temperature annealing also causes the implant to redistribute. To minimize the implant diffusion, several materials, such as SiO2 and Si3N4, have been used to encapsulate the III-V samples prior to high temperature annealing. There has been little success in preventing some implant diffusion in the SiC sample, since these materials become volatile and useless at temperatures higher than 1300 C, a temperature range necessary to process the SiC substrate. In this work, A1N was used as an encapsulate layer for B-, As-, and Sb-implanted SiC samples before high temperature annealing. These samples were annealed to 1600 C for 15 min to 30 min and the profiles were characterized by secondary ion mass spectrometry (SIMS) to verify the effectiveness of A1N encapsulate layers.
Secondary ion mass spectrometry : SIMS XII : proceedings of the Twelfth International Conference on Secondary Mass Spectrometry (SIMS XII)
September 5-6, 1999
International Conference on Secondary Ion Mass Spectrometry
A1N encapsulant, AFM, SiC, SIMS
, Handy, E.
and Rao, M.
Effect of AIN Encapsulate in High-Temperature Annealing on Ion-Implanted SiC as Characterized by SIMS, Secondary ion mass spectrometry : SIMS XII : proceedings of the Twelfth International Conference on Secondary Mass Spectrometry (SIMS XII), Brussels, BE
(Accessed December 6, 2023)