Diffuse Reflectance Spectroscopy for In Situ Process Monitoring and Control During Molecular Beam Epitaxy Growth of InGaAs Pseudomorphic High Electron Mobility Transistors

Published

September 29, 2000

Author(s)

Jonathan E. Guyer, W. F. Tseng, Joseph G. Pellegrino

Abstract

We report the use of diffuse reflectance spectroscopy for active, closed-loop control of substrate temperature during the growth of a modulation doped heterostructure. Measurement and control of substrate temperature is a common difficulty for molecular beam epitaxy (MBE), as well as other semiconductor deposition techniques. To examine the effect of the temperature lag experienced during conventional MBE, we have grown identical pairs of GaAs/InGaAs/AlGaAs psuedomorphic high electron mobility transistors (pHEMTs). For one pHEMT in each pair, the input signal for substrate temperature control was the standard thermocouple (TC); for the other, it was a diffuse reflectance spectrometer (DRS). Under TC control, an overshoot of up to 70 0C was observed during the temperature upramp following the lower-temperature deposition of the InGaAs layer. This overshoot was eliminated under DRS control. Temperature errors can lead to heterolayer changes such as segregation, desorption, and changes in dopant activation.

Citation

Journal of Vacuum Science and Technology

Pub Type

Journals

Keywords

diffuse reflectance spectroscopy, molecular beam epitaxy, MBE, semiconductors

Citation

Guyer, J. , Tseng, W. and Pellegrino, J. (2000), Diffuse Reflectance Spectroscopy for In Situ Process Monitoring and Control During Molecular Beam Epitaxy Growth of InGaAs Pseudomorphic High Electron Mobility Transistors, Journal of Vacuum Science and Technology (Accessed April 27, 2024)