Swyt, D.
(2001),
Developments at NIST in High-Precision Length Metrology for Microelectronics, Proceedings of PTB 2001 Seminar on High-Precision Length Metrology, GE
(Accessed June 4, 2023)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Developments at NIST in High-Precision Length Metrology for Microelectronics
Published
Author(s)
Abstract
This paper describes current work at NIST in high-precision length metrology aimed at development of such low-uncertainty reference measurements for microelectronics metrology. The paper is organized into three main sections. The first section describes NIST work specific to CD and overlay metrology. The second section describes NIST ID and 2D length capabilities related to microelectronics overall. The last section describes some NIST long-term research aimed at future development of other microelectronics-related capabilities in length metrology.Proceedings Title
Proceedings of PTB 2001 Seminar on High-Precision Length Metrology
Conference Location
GE
Pub Type
Conferences
Keywords
atom spacings, grid position, length metrology, linewidth, magnification, measurement, microelectronics, overlay
Citation
Created January 1, 2001, Updated February 19, 2017