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PUBLICATIONS

Development of a Standard Reference Material for Measurement of Interstitial Oxygen Concentration in Semiconductor Silicon by Infrared Absorption

Published

Author(s)

Brian G. Rennex, James R. Ehrstein, Robert I. Scace
Proceedings Title
Extended Abstracts of the Electrochemical Society
Conference Dates
October 9-14, 1994
Conference Location
Miami Beach, FL, USA
Pub Type
Conferences

Citation

Rennex, B. , Ehrstein, J. and Scace, R. (1994), Development of a Standard Reference Material for Measurement of Interstitial Oxygen Concentration in Semiconductor Silicon by Infrared Absorption, Extended Abstracts of the Electrochemical Society, Miami Beach, FL, USA (Accessed October 15, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 30, 1994, Updated October 12, 2021
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