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Defect Generation in Ultra-thin Oxide Over Large Fluence Range

Published

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein

Abstract

The defect generation rate (Pg) during constant voltage stress is investigated by using short-time voltage pulses over large fluence range. It is found that Pg is not constant as a function of injected charge and the voltage acceleration of Pg in the linear defect generation regime is similar to that of the reciprocal of QBD. The change of carrier capture cross (sigma) during defect generation was speculated as one of the reasons responsible for the change of Pg value. However, from this preliminary report, we have determined that the change of Pg can not be explained by the change of sigma.
Proceedings Title
Proc., IEEE International Integrated Reliability Workshop
Conference Dates
October 21-24, 2002
Conference Location
Lake Tahoe, CA, USA
Conference Title
IEEE International Integrated Reliability Workshop

Keywords

capture cross section, charge pumping, non-linear, P<sub>g</sub>, pulse stress

Citation

Heh, D. , Vogel, E. and Bernstein, J. (2002), Defect Generation in Ultra-thin Oxide Over Large Fluence Range, Proc., IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA (Accessed February 29, 2024)
Created October 20, 2002, Updated October 12, 2021