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Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

Published

Author(s)

Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel

Abstract

The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural defects in the Silicon-On-Insulator layer. The dielectric function of the Silicon-On-Insulator that best models the experimental ellipsometric data includes a physical mixture of crystalline silicon and about 4 to 7 % of amorphous silicon, suggesting a slight lack of long-range order of the silicon atoms in the Silicon-On-Insulator layer. The use of a dielectric function other than that of pure crystalline silicon is supported by Raman spectroscopic results that indicate the presence of structural defects in the Silicon-On-Insulator layer. These structural defects are attributed to the effects of hydrogen implantation.
Citation
Applied Physics Letters
Volume
85
Issue
14

Keywords

crystallinity, optical properties, Raman Spectroscopy, Silicon-On-Insulator, Spectroscopic Ellipsometry, Thin films

Citation

Nguyen, N. , Maslar, J. , Kim, J. , Han, J. , Park, J. , Chandler-Horowitz, D. and Vogel, E. (2004), Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy, Applied Physics Letters (Accessed May 29, 2024)

Issues

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Created October 3, 2004, Updated October 12, 2021