Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural defects in the Silicon-On-Insulator layer. The dielectric function of the Silicon-On-Insulator that best models the experimental ellipsometric data includes a physical mixture of crystalline silicon and about 4 to 7 % of amorphous silicon, suggesting a slight lack of long-range order of the silicon atoms in the Silicon-On-Insulator layer. The use of a dielectric function other than that of pure crystalline silicon is supported by Raman spectroscopic results that indicate the presence of structural defects in the Silicon-On-Insulator layer. These structural defects are attributed to the effects of hydrogen implantation.
Applied Physics Letters
crystallinity, optical properties, Raman Spectroscopy, Silicon-On-Insulator, Spectroscopic Ellipsometry, Thin films
, Maslar, J.
, Kim, J.
, Han, J.
, Park, J.
, Chandler-Horowitz, D.
and Vogel, E.
Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy, Applied Physics Letters
(Accessed December 4, 2023)