Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

Published

October 4, 2004

Author(s)

Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel

Abstract

The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural defects in the Silicon-On-Insulator layer. The dielectric function of the Silicon-On-Insulator that best models the experimental ellipsometric data includes a physical mixture of crystalline silicon and about 4 to 7 % of amorphous silicon, suggesting a slight lack of long-range order of the silicon atoms in the Silicon-On-Insulator layer. The use of a dielectric function other than that of pure crystalline silicon is supported by Raman spectroscopic results that indicate the presence of structural defects in the Silicon-On-Insulator layer. These structural defects are attributed to the effects of hydrogen implantation.

Citation

Applied Physics Letters

Volume

85

Issue

14

Pub Type

Journals

Keywords

crystallinity, optical properties, Raman Spectroscopy, Silicon-On-Insulator, Spectroscopic Ellipsometry, Thin films

Citation

Nguyen, N. , Maslar, J. , Kim, J. , Han, J. , Park, J. , Chandler-Horowitz, D. and Vogel, E. (2004), Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy, Applied Physics Letters (Accessed October 11, 2025)