The location of GaN nanowires was controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Growth was uniform within mask openings and absent on the mask surface for over 95 % of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires were controlled by the size of the mask openings. Openings approximately 400 nm or less produced single nanowires with symmetrically faceted tips.
Citation: Nano Letters
Pub Type: Journals
gallium nitride, nanowire, selective epitaxy