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Conference Report: NIST Workshop on Thin Dielectric Film Metrology

Published

Author(s)

Barbara J. Belzer, James R. Ehrstein

Abstract

A two-day workshop on Thin Dielectric Film Metrology was conducted by the Semiconductor Electronics Division, October 30-31, 1997, at NIST Gaithersburg. The purpose was to assess the status of optical metrology for application to semiconductor thin film technology, associated needs for measurement traceability to NIST, as well as possible mechanisms for meeting those needs in an era when critical films are being fabricated at 4 nm thickness and will shrink to thicknesses of less than 2 nm. Speakers who had notable expertise in the area of optical metrology and use of standards were invited from a variety of semiconductor industry venues. Speakers from NIST represented the Standard Reference Materials Program, the National Voluntary Laboratory Accreditation Program, the Statistical Engineering Division and the Semiconductor Electronics Division. Discussion sessions were held to develop a consensus of metrological requirements for thin film standards and to develop a list of action items, the resolution of which would be highly important to enabling traceability for current and future generations of thin film technology.
Citation
Journal of Research (NIST JRES) -
Volume
103
Issue
4

Keywords

ellipsometry, metrology, reflectometry, semiconductor, standards, thin dielectric, traceability

Citation

Belzer, B. and Ehrstein, J. (1998), Conference Report: NIST Workshop on Thin Dielectric Film Metrology, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD (Accessed July 21, 2024)

Issues

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Created July 31, 1998, Updated October 12, 2021