Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Component Segregation in Model Chemically Amplified Resists

Published

Author(s)

John T. Woodward IV, Theodore Fedynyshyn, David Astolfi, Susan Cann, Michael Leeson

Abstract

We have applied chemical force microscopy (CFM) to probe the chemical segregation of resist materials. CFM is capable of providing simultaneous information about surface topography and chemical heterogeneity of partiallt developed resist films. We have used CFM to study ESCAP based resists that are used in 248 nm and extreme ultraviolet (EUV) lithography. We observe changes in both the material roughness and chemical heterogeneity of the resist with the introduction of PAG and with exposure and post exposure bake (PEB). We conclude that chemical segregation in the resist can influence the innate material roughness.
Proceedings Title
SPIE Proceedings | Advanced Lithography | 2007 | SPIE
Volume
6519
Conference Dates
February 25-27, 2007
Conference Title
SPIE Proceedings

Keywords

AFM, chemical force microscopy, line edge roughness, PAG, photoresist

Citation

Woodward, J. , Fedynyshyn, T. , Astolfi, D. , Cann, S. and Leeson, M. (2007), Component Segregation in Model Chemically Amplified Resists, SPIE Proceedings | Advanced Lithography | 2007 | SPIE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=841082 (Accessed April 19, 2024)
Created March 15, 2007, Updated February 19, 2017