Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

Published

April 18, 2024

Author(s)

Aaron Katzenmeyer, Michael Titze, Sam Frisone, Tony Ohlhausen, Anthony Flores, Deanna Campbell, Bingjun Li, Yongqiang Wang, Jung Han, Edward Bielejec, Rachel Goldman

Abstract

We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAIS) for scalable focused-ion-beam (FIB) implantation doping of GaN. We consider GaMg, MgSO4•7H2O, MgZn, AlMg, and AuMgSi alloys. Although issues of oxidation (GaMg), decomposition (MgSO4•7H2O), and excessive vapor pressure (MgZn and AlMg) were encountered, the AuMgSi alloy LMAIS operating in a Wien-filtered FIB column emits all Mg isotopes in a singly- and doubly-charged ionization states. We discuss the operating conditions to achieve < 20nm spot size Mg FIB implantation and present Mg depth profile data from Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). We also provide insight into implantation damage and recovery based upon cathodoluminescence (CL) spectroscopy before and after rapid thermal processing. Prospects for incorporating the Mg LMAIS into high-power electronic device fabrication are also discussed.

Citation

AIP Advances

Volume

14

Issue

4

Pub Type

Journals

Download Paper

https://doi.org/10.1063/5.0198791

Local Download

Citation

Katzenmeyer, A. , Titze, M. , Frisone, S. , Ohlhausen, T. , Flores, A. , Campbell, D. , Li, B. , Wang, Y. , Han, J. , Bielejec, E. and Goldman, R. (2024), Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN, AIP Advances, [online], https://doi.org/10.1063/5.0198791 , https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=957347 (Accessed December 13, 2024)