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Comparison of Curing Processes for Porous Dielectrics Measurements From Specular X-ray Reflectivity

Published

Author(s)

R C. Hedden, C Waldfried, H Y. Lee, O Escorcia

Abstract

A nanoporous organosilicate low-k dielectric was cured by several techniques: standard furnace cure, a novel ultraviolet (UV) process, and three plasma processes. The films' electron density depth profile, pore volume fraction, and moisture uptake were measured by Specular X-ray Reflectivity (SXR). Several of the films had similar characteristics, suggesting that UV and plasma curing may be suitable alternatives to furnace curing. The measurements illustrate the value of SXR for characterization of depth-dependent phenomena in nanoporous thin films.
Citation
Journal of the Electrochemical Society
Volume
151(8)

Keywords

dielectrics, low-K, Thin films, X-Ray refectivity

Citation

Hedden, R. , Waldfried, C. , Lee, H. and Escorcia, O. (2004), Comparison of Curing Processes for Porous Dielectrics Measurements From Specular X-ray Reflectivity, Journal of the Electrochemical Society, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852140 (Accessed February 24, 2024)
Created January 1, 2004, Updated February 17, 2017