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Comparison of AlGaAs oxidation in MBE and MOCVD grown samples

Published

Author(s)

Y Chen, Alexana Roshko, Kristine A. Bertness, Dennis W. Readey, Marc A. Mansfield, M. Tan, A. Tandon

Abstract

Simultaneous wet thermal oxidation of MBE and MOCVD grown AlxGa1-xAs layers showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the AlxGa1-xAs layers and that maintaining consistent Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the V/III ratio during growth nor by impurities at concentrations less than or equal to 10 ppm.
Proceedings Title
2002 Materials Research Society Symposium
Volume
692
Conference Dates
November 26-29, 2001
Conference Location
Boston, MA, US

Keywords

AlGaAs, MBE, MOCVD, native oxides

Citation

Chen, Y. , Roshko, A. , Bertness, K. , Readey, D. , Mansfield, M. , Tan, M. and Tandon, A. (2002), Comparison of AlGaAs oxidation in MBE and MOCVD grown samples, 2002 Materials Research Society Symposium, Boston, MA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=1962 (Accessed March 4, 2024)
Created December 31, 2001, Updated October 12, 2021