Comparison of AlGaAs oxidation in MBE and MOCVD grown samples

Published

January 1, 2002

Author(s)

Y Chen, Alexana Roshko, Kristine A. Bertness, Dennis W. Readey, Marc A. Mansfield, M. Tan, A. Tandon

Abstract

Simultaneous wet thermal oxidation of MBE and MOCVD grown Al_xGa_1-xAs layers showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the Al_xGa_1-xAs layers and that maintaining consistent Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the V/III ratio during growth nor by impurities at concentrations less than or equal to 10 ppm.

Proceedings Title

2002 Materials Research Society Symposium

Volume

692

Conference Dates

November 26-29, 2001

Conference Location

Boston, MA, US

Pub Type

Conferences

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Keywords

AlGaAs, MBE, MOCVD, native oxides

Citation

Chen, Y. , Roshko, A. , Bertness, K. , Readey, D. , Mansfield, M. , Tan, M. and Tandon, A. (2002), Comparison of AlGaAs oxidation in MBE and MOCVD grown samples, 2002 Materials Research Society Symposium, Boston, MA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=1962 (Accessed October 14, 2025)