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Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope
Published
Author(s)
Joseph A. Stroscio, H.J. Yang, Jungseok Chae, H. Baek, Jeonghoon Ha, Young Kuk, Suyong S. Jung, Young J. Song, Nikolai Zhitenev, S.J. Woo, Young-Woo Son
Citation
International Journal of High Speed Electronics and Systems
Stroscio, J.
, Yang, H.
, Chae, J.
, Baek, H.
, Ha, J.
, Kuk, Y.
, Jung, S.
, Song, Y.
, Zhitenev, N.
, Woo, S.
and Son, Y.
(2011),
Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope, International Journal of High Speed Electronics and Systems, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908985
(Accessed October 8, 2025)