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Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope

Published

Author(s)

Joseph A. Stroscio, H.J. Yang, Jungseok Chae, H. Baek, Jeonghoon Ha, Young Kuk, Suyong S. Jung, Young J. Song, Nikolai Zhitenev, S.J. Woo, Young-Woo Son
Citation
International Journal of High Speed Electronics and Systems
Volume
20
Issue
01

Citation

Stroscio, J. , Yang, H. , Chae, J. , Baek, H. , Ha, J. , Kuk, Y. , Jung, S. , Song, Y. , Zhitenev, N. , Woo, S. and Son, Y. (2011), Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope, International Journal of High Speed Electronics and Systems, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908985 (Accessed June 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 28, 2011, Updated October 12, 2021