Blanchard, P.
, Brubaker, M.
, Harvey, T.
, Roshko, A.
, Sanford, N.
, Weber, J.
and Bertness, K.
(2018),
Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy, Nanotechnology, [online], https://doi.org/10.3390/cryst8040178
(Accessed December 9, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy
Published
Author(s)
, , , , , ,
Citation
Nanotechnology
Volume
8
Pub Type
Journals
Download Paper
Keywords
sub-monolayer contaminants, selective-area molecular beam epitaxy, GaN nanowires
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 19, 2018, Updated June 1, 2020