NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

Published

Author(s)

Paul T. Blanchard, Matthew D. Brubaker, Todd E. Harvey, Alexana Roshko, Norman A. Sanford, Joel C. Weber, Kristine A. Bertness
Citation
Nanotechnology
Volume
8
Pub Type
Journals

Download Paper

DOI Link

Keywords

sub-monolayer contaminants, selective-area molecular beam epitaxy, GaN nanowires
Nanotechnology, Nanometrology and Composition and structure

Citation

Blanchard, P. , Brubaker, M. , Harvey, T. , Roshko, A. , Sanford, N. , Weber, J. and Bertness, K. (2018), Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy, Nanotechnology, [online], https://doi.org/10.3390/cryst8040178 (Accessed October 9, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 19, 2018, Updated June 1, 2020
Was this page helpful?