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Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

Published

Author(s)

Paul T. Blanchard, Matthew D. Brubaker, Todd E. Harvey, Alexana Roshko, Norman A. Sanford, Joel C. Weber, Kristine A. Bertness
Citation
Nanotechnology
Volume
8

Keywords

sub-monolayer contaminants, selective-area molecular beam epitaxy, GaN nanowires

Citation

Blanchard, P. , Brubaker, M. , Harvey, T. , Roshko, A. , Sanford, N. , Weber, J. and Bertness, K. (2018), Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy, Nanotechnology, [online], https://doi.org/10.3390/cryst8040178 (Accessed June 24, 2021)
Created April 19, 2018, Updated June 1, 2020