Bulk SiGe wafers cut from single-crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro- and macroheterogeneity for use as primary standards for future characterization of SiGe thin films on Si that are needed by the microelectronics industry as reference standards. Specimens with nominal compositions of 14 and 6.5 atomic % Ge were rigorously tested with wavelength dispersive spectrometers (WDS) using multiple point, multiple sample, and duplicate data acquisitions. The SiGe14 wafer will make a very good bulk reference material for microanalysis to evaluate SiGe thin films on Si.
Proceedings Title: Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP
Conference Dates: March 24-28, 2003
Conference Location: Austin, TX
Conference Title: AIP Conference Proceedings
Pub Type: Conferences
Electron Probe Microanalysis, EPMA, heterogeneity, homogeneity, micro-heterogeneity, reference standards, SiGe, Silicon-Germanium Technology