Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping

Published

Author(s)

Eric M. Vogel
Proceedings Title
Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-k Dielectrics
Conference Dates
July 11-14, 2005
Conference Location
St. Petersburg, RS
Conference Title
NATO Advanced Research Workshop on Defects in Advanced High-k Dielectrics

Citation

Vogel, E. (2005), Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping, Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-k Dielectrics, St. Petersburg, RS (Accessed October 24, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created July 14, 2005, Updated January 27, 2020
Was this page helpful?