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Characterization of Asymmetric Coupled CMOS Lines



Uwe Arz, Dylan F. Williams, Dave K. Walker, J. E. Rogers, M. Rudack, D. Treytner, Hartmut Grabinski


This paper investigates the properties of asymmetric coupled lines built in a 0.25 5m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from callibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.
Proceedings Title
Dig., IEEE Microwave Theory Tech. Intl. Symp.
Conference Dates
June 11-16, 2000
Conference Location
Boston, MA


electromagnetic simulation, equivalent-circuit parameters, measurement, silicon, substrate effect transmission line


Arz, U. , Williams, D. , Walker, D. , Rogers, J. , Rudack, M. , Treytner, D. and Grabinski, H. (2000), Characterization of Asymmetric Coupled CMOS Lines, Dig., IEEE Microwave Theory Tech. Intl. Symp., Boston, MA, [online], (Accessed July 20, 2024)


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Created June 1, 2000, Updated November 10, 2018