Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

Published

November 7, 2014

Author(s)

Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin

Abstract

In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal cycling on the RF signal characteristics (insertion loss (S21) and return loss (S11)) is used to infer thermo-mechanical stress-induced defects in metal interconnects. The inferred defects are supported with physical analytical data where possible.

Citation

ECS Journal of Solid State Science and Technology

Volume

4

Issue

1

Pub Type

Journals

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DOI Link

Keywords

Radio frequency, integrated circuits, reliability, failure mode analysis

Citation

You, L. , Okoro, C. , Ahn, J. , Kopanski, J. , Obeng, Y. and Franklin, R. (2014), Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses, ECS Journal of Solid State Science and Technology, [online], https://doi.org/10.1149/2.0151501jss (Accessed April 26, 2024)