A Brief Overview of Scanning Transmission Electron Microscopy in a Scanning Electron Microscope (STEM-in-SEM)

Published

November 1, 2021

Author(s)

Jason Holm

Abstract

Scanning electron microscopes (SEMs) and the transmission electron detectors used therein are widely available. Both are generally easy to use, making the collection of imaging and diffraction techniques referred to as Scanning Transmission Electron Microscopy in a Scanning Electron Microscope (STEM-in-SEM) more accessible today than ever before. These techniques are well suited to a host of applications including, for example, nanoparticle metrology [1], imaging beam sensitive materials [2], grain texture studies [3], and defect analyses [4]. In this article, some of the pros and cons of STEM-in-SEM and recent advancements in detector technology are described. To illustrate imaging and diffraction capabilities of STEM-in-SEM, a few applications are shown including 4 dimensional (4D) STEM-in-SEM, a recently developed method that leverages both real and diffraction space to obtain useful information.

Citation

Electronic Device Failure Analysis

Volume

4

Issue

4

Pub Type

Journals

Download Paper

Local Download

Keywords

scanning electron microscope, transmission-SEM, STEM-in-SEM, 4D STEM

Citation

Holm, J. (2021), A Brief Overview of Scanning Transmission Electron Microscopy in a Scanning Electron Microscope (STEM-in-SEM), Electronic Device Failure Analysis, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=932860 (Accessed April 20, 2024)