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Band Alignment Measurement by Internal Photoemission Spectroscopy

Published

Author(s)

Nhan V. Nguyen

Abstract

parameters affecting the performance of advanced electronic and optoelectronic devices. Among the common band offset measurement techniques, internal photoemission has been proven to be a novel method which is almost a direct measurement without complicated modeling commonly used in other techniques. In this chapter, the basic principle of the internal photoemission (IPE) spectroscopy is introduced with the main focus on the threshold spectroscopy. The IPE processes (optical excitation, transport, and escape of charge carriers) are described in details. An instruction to a special case of hole emission measurement is presented with a brief description of a IPE experimental setup. Demonstrations of IPE measurements and data analyses will be performed on special classes of materials including a semiconductor heterojunction and graphene.
Citation
Metrology and Diagnostic Technology for Nanoelectronics
Publisher Info
Pan Stanford Publishing, Boca Raton, FL

Keywords

Internal Photoemission, band offset, band alignment, heterojunction

Citation

Nguyen, N. (2017), Band Alignment Measurement by Internal Photoemission Spectroscopy, Metrology and Diagnostic Technology for Nanoelectronics, Pan Stanford Publishing, Boca Raton, FL (Accessed April 14, 2024)
Created January 30, 2017, Updated August 31, 2017