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Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides:

Published

Author(s)

Warren K Gladden, Stephen R Slaughter, Walter M Duncan, Aslan Baghdadi
Citation
- NIST SP 400-81
Report Number
NIST SP 400-81

Citation

Gladden, W. , Slaughter, S. , Duncan, W. and Baghdadi, A. (1988), Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.SP.400-81 (Accessed April 12, 2024)
Created January 1, 1988, Updated May 20, 2023