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Atomic layer deposition enabled interconnect technology for vertical nanowire array devices



Myongjai Lee, Jen-Hau Cheng, Kristine A. Bertness, Norman Sanford, Dragos Seghete, Steven M. George, Y.C. Lee


We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5-10m in length, 80-200nm in diameter) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALD-alumina)/conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL)wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices,such as nanowire light emitting diodes, nanowire-based field effect transistors, resonators, batteries or biomedical applications.
Conference Dates
June 21-25, 2009
Conference Location
Denver, CO, US
Conference Title
Transducers 2009


Atomic layer deposition (ALD), BCB encapsulation, Focus ion beam (FIB), GaN nanowires, interconnect, our point measurement


Lee, M. , Cheng, J. , Bertness, K. , Sanford, N. , Seghete, D. , George, S. and Lee, Y. (2009), Atomic layer deposition enabled interconnect technology for vertical nanowire array devices, Transducers 2009, Denver, CO, US, [online], (Accessed July 19, 2024)


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Created June 19, 2009, Updated October 12, 2021