Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Atomic layer deposition enabled interconnect technology for vertical nanowire array devices

Published

Author(s)

Myongjai Lee, Jen-Hau Cheng, Kristine A. Bertness, Norman Sanford, Dragos Seghete, Steven M. George, Y.C. Lee

Abstract

We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5-10m in length, 80-200nm in diameter) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALD-alumina)/conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL)wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices,such as nanowire light emitting diodes, nanowire-based field effect transistors, resonators, batteries or biomedical applications.
Conference Dates
June 21-25, 2009
Conference Location
Denver, CO, US
Conference Title
Transducers 2009

Keywords

Atomic layer deposition (ALD), BCB encapsulation, Focus ion beam (FIB), GaN nanowires, interconnect, our point measurement

Citation

Lee, M. , Cheng, J. , Bertness, K. , Sanford, N. , Seghete, D. , George, S. and Lee, Y. (2009), Atomic layer deposition enabled interconnect technology for vertical nanowire array devices, Transducers 2009, Denver, CO, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902321 (Accessed March 5, 2024)
Created June 19, 2009, Updated October 12, 2021