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2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures

Published

Author(s)

G. Neubauer, A. Erickson, C. C. Williams, Joseph Kopanski, M. Rodgers, D. Adderton
Proceedings Title
Semiconductor Characterization - Present Status and Future Needs
Conference Location
Gaithersburg, MD, USA

Citation

Neubauer, G. , Erickson, A. , Williams, C. , Kopanski, J. , Rodgers, M. and Adderton, D. (1995), 2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures, Semiconductor Characterization - Present Status and Future Needs, Gaithersburg, MD, USA (Accessed December 4, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1995, Updated October 12, 2021