Neubauer, G.
, Erickson, A.
, Williams, C.
, Kopanski, J.
, Rodgers, M.
and Adderton, D.
(1995),
2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures, Semiconductor Characterization - Present Status and Future Needs, Gaithersburg, MD, USA (Accessed May 5, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
2D-Scanning Capacitance Microscopy Measurement of Cross-Sectional VLSI Test Structures
Published
Author(s)
G. Neubauer, A. Erickson, C. C. Williams, , M. Rodgers, D. Adderton
Proceedings Title
Semiconductor Characterization - Present Status and Future Needs
Conference Location
Gaithersburg, MD, USA
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created December 30, 1995, Updated October 12, 2021