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Journals

Use of non-targeted and suspect screening analysis to detect sources of human exposure to environmental contaminants

Author(s)
Katherine Manz, Anna Feerick, Joseph Braun, Yong-Lai Feng, Amber Hall, Jeremy Koelmel, Carlos A. Manzano, Seth Newton, Kurt Pennell, Benjamin Place, Krystal Godri Pollitt, Carsten Prasse, Joshua Young
Non-targeted analysis (NTA) and suspect screening analysis (SSA) are powerful techniques that rely on high-resolution mass spectrometry (HRMS) and computational

Detection of a Pair Density Wavestate in UTe2

Author(s)
Qiangqiang Gu, Joseph Carroll, Shuqiu Wang, Sheng Ran, Christopher Broyles, Hasan Siddiquee, Nicholas Butch, Shanta Saha, Johnpierre Paglione, J. Davis, Xiaolong Liu

Comment on "Search for explanation of the neutron lifetime anomaly"

Author(s)
Fred Wietfeldt, Ripan Biswas, Jimmy Caylor, Bret Crawford, Maynard Dewey, Nadia Fomin, Geoffrey Greene, Christopher Haddock, Shannon Hoogerheide, Hans Mumm, Jeffrey Nico, William Snow, Joseph Zuchegno
We respond to issues raised by Serebrov et al. in a recent paper regarding systematic effects in the beam neutron lifetime experiment performed at NIST. We show

Low-field MRI: A report on the 2022 ISMRM workshop

Author(s)
Adrienne Campbell-Washburn, Katy Keenan, Peng Hu, John Mugler, Krishna Nayak, Andrew Webb, Johnes Obungoloch, Kevin Sheth, Jürgen Hennig, Matthew Rosen, Najat Salameh, Daniel Sodickson, Joel Stein, José Marques, Orlando Simonetti

Quantum-limited optical time transfer for future geosynchronous links

Author(s)
Emily Caldwell, Jean-Daniel Deschenes, Jennifer Ellis, William C. Swann, Benjamin Stuhl, Hugo Bergeron, Nathan R. Newbury, Laura Sinclair
The combination of optical time transfer and optical clocks opens up the possibility of large-scale free-space networks that connect both ground-based optical

A non-defect precursor gate oxide breakdown model

Author(s)
Kin (Charles) Cheung
Understanding defect creation is central to efforts to comprehend gate dielectric breakdown in metal-oxide-semiconductor-field-effect-transistors (MOSFETs)
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