Project Brief: General Electric, GE Global Research

NIST Measurement Science and Engineering Research Grants


Develop novel measurement techniques to study the interface between silicon carbide (SiC) and silicon dioxide (SiO2) in metal oxide semiconductor field-effect transistor (MOSFET) devices designed to handle large amounts of power for rapidly routing electrical energy to customers from diverse sources such as wind and solar powered devices.

RECIPIENT: General Electric, GE Global Research, Niskayuna, NY

  • Project duration: 3 Years
  • Total NIST Funding: $1,500,000

GE Global Research and The Pennsylvania State University will develop novel measurement techniques to study the SiC-SiO2 interface in silicon carbide power MOSFET devices. The team will develop measurement techniques based on pulsed gate Hall effect, electron spin resonance based, and synchrotron-based X-ray photoemission spectroscopy to characterize the electrical resistance of the SiC-SiO2 interface. Reducing the interfacial resistance is a critical technical requirement for enabling SiC MOSFET devices to provide a quantum leap in efficiency, operating frequency, and operating temperature for processing electrical energy. These improvements will enable a key component to efficiently process energy from diverse variable sources such as wind- and solar-powered devices and rapidly route it to customers.

Public contact (for project information):

Todd Alhart, 518-387-7914

Project Partners: The Pennsylvania State University

NIST Program Office Contact:

Jason Boehm, 301-975-8678

Created January 20, 2010, Updated October 05, 2010