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Sergiy Krylyuk (Fed)

Material Researcher Engineer

Dr. Krylyuk is a member of the Functional Nanostructured Materials Group in the Materials Science and Engineering Division at National Institute of Standards and Technology (NIST). He earned his PhD degree in Physics from Chernivtsi National University (Chernivtsi, Ukraine) in 1999 and worked in the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (Kyiv, Ukraine). Dr. Krylyuk joined NIST in 2005 to work on developing capabilities for fabrication of Si and GaN nanowires using Chemical Vapor Deposition method. His current research focuses on the development of Chemical Vapor Transport and Bridgman-Stockbarger methods to grow a variety of 2D materials with defined and tunable composition, electronic, magnetic and optical properties, including MoTe2, WSe2, WTe2, InSe, In2Se3, etc. Dr. Krylyuk coauthored 90+ research papers and one US Patent.


Isotopic effects on in-plane hyperbolic phonon polaritons in MoO3

Jeremy Schultz, Sergiy Krylyuk, Jeffrey Schwartz, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs), hybrids of light and lattice vibrations in polar dielectric crystals, empower nano-photonic applications by enabling the

Strain-activated stimulated emission from multilayer MoSe2 in a narrow operation window

Yuankun Lin, Noah Hurley, Steve Kamau, Evan Hathaway, Yan Jiang, Roberto Gonzalez Rodriguez, Sinto Varghese, Sergiy Krylyuk, Albert Davydov, Yuanxi Wang, Anupama Kaul, Jingbiao Cui
Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels

Electrostatic modulation of thermoelectric transport properties of 2H-MoTe2

Tianhui Zhu, Sree Sourav Das, Safoura Nayebsadeghi, Fajana Tonni, Sergiy Krylyuk, Costel Constantin, Keivan Esfarjani, Albert Davydov, Mona Zebarjadi
Two-dimensional layered transition metal dichalcogenides are potential thermoelectric candidates with application in on-chip integrated nanoscale cooling and

Patents (2018-Present)

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device
Created September 24, 2019, Updated December 8, 2022