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Sergiy Krylyuk (Fed)

Material Researcher Engineer

Dr. Krylyuk is a member of the Functional Nanostructured Materials Group in the Materials Science and Engineering Division at National Institute of Standards and Technology (NIST). He earned his PhD degree in Physics from Chernivtsi National University (Chernivtsi, Ukraine) in 1999 and worked in the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (Kyiv, Ukraine). Dr. Krylyuk joined NIST in 2005 to work on developing capabilities for fabrication of Si and GaN nanowires using Chemical Vapor Deposition method. His current research focuses on the development of Chemical Vapor Transport and Bridgman-Stockbarger methods to grow a variety of 2D materials with defined and tunable composition, electronic, magnetic and optical properties, including MoTe2, WSe2, WTe2, InSe, In2Se3, etc. Dr. Krylyuk coauthored 90+ research papers and one US Patent.


Charge Density Wave Activated Excitons in MoSe2

Jaydeep Joshi, Benedikt Scharf, Igor Mazin, Sergiy Krylyuk, Daniel Campbell, Albert Davydov, Johnpierre Paglione, Igor Zutic, Patrick Vora
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures


Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
Patent Description This invention relates to memory devices, in particular to resistive random-access memory (RRAM) cells. RRAM-based technology has gained attention of the semiconductor industry due to its potential scalability, high operation speed, high endurance and ease of process flow. RRAM
Created September 24, 2019, Updated June 15, 2021