Dr. Krylyuk is a member of the Functional Nanostructured Materials Group in the Materials Science and Engineering Division at National Institute of Standards and Technology (NIST). He earned his PhD degree in Physics from Chernivtsi National University (Chernivtsi, Ukraine) in 1999 and worked in the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (Kyiv, Ukraine). Dr. Krylyuk joined NIST in 2005 to work on developing capabilities for fabrication of Si and GaN nanowires using Chemical Vapor Deposition method. His current research focuses on the development of Chemical Vapor Transport and Bridgman-Stockbarger methods to grow a variety of 2D materials with defined and tunable composition, electronic, magnetic and optical properties, including MoTe2, WSe2, WTe2, InSe, In2Se3, etc. Dr. Krylyuk coauthored 90+ research papers and one US Patent.