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Sergiy Krylyuk

Material Researcher Engineer

Dr. Krylyuk is a member of the Functional Nanostructured Materials Group in the Materials Science and Engineering Division at National Institute of Standards and Technology (NIST). He earned his PhD degree in Physics from Chernivtsi National University (Chernivtsi, Ukraine) in 1999 and worked in the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (Kyiv, Ukraine). Dr. Krylyuk joined NIST in 2005 to work on developing capabilities for fabrication of Si and GaN nanowires using Chemical Vapor Deposition method. His current research focuses on the development of Chemical Vapor Transport and Bridgman-Stockbarger methods to grow a variety of 2D materials with defined and tunable composition, electronic, magnetic and optical properties, including MoTe2, WSe2, WTe2, InSe, In2Se3, etc. Dr. Krylyuk coauthored 90+ research papers and one US Patent.

Publications

Photocurrent detection of the orbital angular momentum of light

Author(s)
Zhurun Ji, Wenjing Liu, Sergiy Krylyuk, Xiaopeng Fan, Zhifeng Zhang, Anlian Pan, Liang Feng, Albert Davydov, Ritesh Agarwal
Utilizing the orbital angular momentum (OAM) of light is promising for increasing the bandwidth of optical communication networks. However, direct photocurrent

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve

Doping of MoTe2 via surface charge-transfer in ambient air

Author(s)
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority

Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Author(s)
Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert Davydov, Patrick M. Vora
Alloyed transition metals dichalcogenides (TMDs) provide the unique opportunity for coupling band engineering and valleytronic phenomena in an atomically-thin
Created September 24, 2019, Updated May 15, 2020