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Search Patents by Sergiy Krylyuk

Displaying 1 - 1 of 1

Phase Transition Based Resistive Random-Access Memory

NIST Inventors
Albert Davydov , Sergiy Krylyuk and Huairuo Zhang
Patent Description This invention relates to memory devices, in particular to resistive random-access memory (RRAM) cells. RRAM-based technology has gained attention of the semiconductor industry due to its potential scalability, high operation speed, high endurance and ease of process flow. RRAM