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Richard Chamberlin (Ctr)

Publications

On-Wafer Vector-Network-Analyzer Measurements at mK Temperatures

Author(s)
Elyse McEntee Wei, Richard Chamberlin, Nate Kilmer, Joshua Kast, Jake A. Connors, Dylan Williams
We describe a system for performing on-wafer vector-network-analyzer measurements from 100 MHz to 15 GHz at mK temperatures (i.e., less than 20 mK). We first

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp

High-Gain 500-GHz InP HBT Power Amplifiers

Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and
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Created July 30, 2019, Updated December 9, 2022