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Nhan Van Nguyen (Fed)

Dr. Nguyen is a physicist in the NanoScale Spectroscopy Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He joined the Semiconductor Electronics Division at NIST as a National Research Postdoctoral Fellow in 1990 and became a permanent research staff in 1992. He received his B. S degree from the University of Wisconsin – River Falls, and his Ph. D. from the Pennsylvania State University, in Physics in 1984 and 1989, respectively. His research interest involves the investigation of optical and electro-optical properties of semiconductor and dielectric thin films and their interfaces that are technologically important. He is well experienced in optical metrology instrumentation and data analysis. He was awarded the U.S. Department of Commerce Silver Medal Award 2014.

Publications

Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications

Author(s)
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO2/ Si and ZrO2/SiO2/Si were investigated and the interfacial layer of
Created October 9, 2019, Updated June 15, 2021