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Nhan Van Nguyen (Assoc)

Dr. Nguyen is a physicist in the NanoScale Spectroscopy Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He joined the Semiconductor Electronics Division at NIST as a National Research Postdoctoral Fellow in 1990 and became a permanent research staff in 1992. He received his B. S degree from the University of Wisconsin – River Falls, and his Ph. D. from the Pennsylvania State University, in Physics in 1984 and 1989, respectively. His research interest involves the investigation of optical and electro-optical properties of semiconductor and dielectric thin films and their interfaces that are technologically important. He is well experienced in optical metrology instrumentation and data analysis. He was awarded the U.S. Department of Commerce Silver Medal Award 2014.

Selected Publications

Band offset and electron affinity of MBE-grown SnSe2

Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its

Broadband Optical Properties of Graphene by Spectroscopic Ellipsometry

Wei Li, Nhan Van Nguyen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lian-Mao Peng
The broadband (0.7 eV to 9.0 eV) optical properties of chemical-vapor-deposition (CVD) grown graphene are determined by spectroscopic ellipsometry. The optical

Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission

Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S. Suehle, Curt A. Richter, David J. Gundlach, Nhan V. Nguyen
We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements


Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications

Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO 2/ Si and ZrO 2/SiO 2/Si were investigated and the interfacial layer
Created October 9, 2019, Updated December 8, 2022