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Nhan Van Nguyen

Dr. Nguyen is a physicist in the NanoScale Spectroscopy Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He joined the Semiconductor Electronics Division at NIST as a National Research Postdoctoral Fellow in 1990 and became a permanent research staff in 1992. He received his B. S degree from the University of Wisconsin – River Falls, and his Ph. D. from the Pennsylvania State University, in Physics in 1984 and 1989, respectively. His research interest involves the investigation of optical and electro-optical properties of semiconductor and dielectric thin films and their interfaces that are technologically important. He is well experienced in optical metrology instrumentation and data analysis. He was awarded the U.S. Department of Commerce Silver Medal Award 2014.

Publications

Dielectric properties of Nb_{x}W_{1-x}Se_{2} alloys

Author(s)
Albert F. Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela R. Hight Walker, Albert Davydov, David B. Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties

Band offset and electron affinity of MBE-grown SnSe2

Author(s)
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its
Created October 9, 2019