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Jose Ortiz (Assoc)

Publications

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

Author(s)
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area
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Created August 3, 2019, Updated July 3, 2025
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