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James Ashton (Fed)
Material Research Scientist
James P. Ashton is a Materials Research Engineer in the Alternative Computing Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). James received his B.S. degree and Ph.D. at the Pennsylvania State University in Engineering Science and Mechanics. He worked at California Institute of Technology/NASA Jet Propulsion Laboratory during the summers of 2017 and 2019 as a Summer Intern, where he worked on characterizing silicon carbide magnetic field sensors for deep space applications. He served on the technical program committee for the IEEE International Integrated Reliability Workshop 2021 and served as a tutorial session chair at the IEEE International Reliability Physics Symposium 2021. James’ research interests are in development of advanced electrical and magnetic resonance characterization techniques in semiconductor and insulator devices. James has authored 13 scientific papers and received editor’s pick in the Journal of Applied Physics in February of 2021 for his paper titled ”Ultra-low Field Frequency-Swept Electrically Detected Magnetic Resonance.”
Selected Publications
- J. P. Ashton, S. J. Moxim, A. D. Purcell, P. M. Lenahan, and J. T. Ryan, “A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities,” J. Appl. Phys., vol. 130, no. 13, 2021
- J. P. Ashton, B. R. Manning, W. R. Barker, and P. M. Lenahan, “Ultra-low field frequency-swept electrically detected magnetic resonance,” J. Appl. Phys., vol. 129, no. 8, 2021 (EP)
- J. P. Ashton and P. M. Lenahan, “Multiple-photon transitions in electrically detected magnetic resonance measurements of 4H-SiC transistors,” Phys. Rev. B, vol. 102, no. 2, p. 020101(R), 2020