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Gheorghe Stan

Physicist

Research Interests

  • Develop and customize instrumentation for atomic force microscopy to enable advanced and reliable nanoscale property characterization, with direct applications in nanoelectronics, micro- and nano-electromechanical systems, and biotechnology.
  • Atomic force microscopy based characterization of the structure-mechanical property relationship at the nanoscale. Interrogate the size-dependence of the elastic moduli of structures of reduced dimensionality.
  • Develop contact resonance atomic force microscopy (CR-AFM) for nanoscale elastic modulus measurements. Assess the suitability of CR-AFM in performing quantitative measurements on materials with elastic moduli in the range of GPa to hundreds of GPa.

Stan Figure 1
Figure 1(left): Measurements of the normal and tangential elastic moduli of nanowires; Figure 2 (center): Contact resonance atomic force microscopy mapping on granular Au films; Figure 3 (right): Probing the elastic modulus on the inner part of AlN nanotubes.

Patents

  • US Patent # 9,535,085 "Intermittent Contact Resonance Atomic Force Microscopy and Process for Intermittent Contact Resonance Atomic Force Microscopy," Inventors: Stan & Gates (2017)

Google Scholar Citations: http://scholar.google.com/citations?user=dqnptVIAAAAJ&hl=en

Awards

2009 MSEL Distinguished Associate Award

Publications

Doping of MoTe2 via surface charge-transfer in ambient air

Author(s)
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority
Created July 30, 2019, Updated November 14, 2019