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Gheorghe Stan (Fed)


Research Interests

  • Develop and customize instrumentation for Atomic Force Microscopy (AFM) to enable advanced and reliable nanoscale property characterization, with direct applications in nanoelectronics, micro- and nano-electromechanical systems, thin film coatings, additive manufacturing, and biotechnology.
  • Use AFM-based characterization techniques to investigate nanoscale structure-property relationship in fabricated structures and devices.
  • Develop Contact Resonance AFM (CR-AFM) for nanoscale elastic modulus measurements. Extend CR-AFM to Intermittent Contact Resonance AFM (ICR-AFM) for subsurface and 3D mechanical property measurements.
  • Established collaborative work between NIST, academia, industry, and instrument vendors to promote the development of nanoscale characterization techniques for new materials and devices.

    Gheorghe Stan web page
    Left: CR-AFM measurements on the top and across either side of a nanowire. Center: Probing the elastic modulus of AlN nanotubes by CR-AFM. Right: Combined mechanical (Intermittent Contact Resonance AFM) and chemical (AFM Infrared) measurements on high-aspect ratio organosilicate patterns for Cu/low-k dielectric interconnects.
    Credit: Gheorghe Stan


Ongoing Projects



  • US Patent # 9,535,085 "Intermittent Contact Resonance Atomic Force Microscopy and Process for Intermittent Contact Resonance Atomic Force Microscopy," Inventors: Stan & Gates (2017)




2009 MSEL Distinguished Associate Award


Doping of MoTe2 via surface charge-transfer in ambient air

Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority
Created July 30, 2019, Updated December 8, 2022