NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Use of Electrical Test Structures to Characterize Trench Profiles Etched on SOI Wafers
Published
Author(s)
Nadine Guillaume, J. Kiihamaki, J. Karttunen, H. Kattelus
Proceedings Title
Proc. IEEE 2001 Int. Conference on Microelectronic Test Structures
Conference Dates
March 19-22, 2001
Conference Location
Kobe, 1, JA
Pub Type
Conferences
Citation
Guillaume, N.
, Kiihamaki, J.
, Karttunen, J.
and Kattelus, H.
(2001),
Use of Electrical Test Structures to Characterize Trench Profiles Etched on SOI Wafers, Proc. IEEE 2001 Int. Conference on Microelectronic Test Structures, Kobe, 1, JA
(Accessed November 4, 2025)