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The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures
Published
Author(s)
S C. Witczak, Michael Gaitan, John S. Suehle, M. C. Peckerar, M T. Ma
Citation
Solid-State Electronics
Volume
37
Issue
10
Pub Type
Journals
Citation
Witczak, S.
, Gaitan, M.
, Suehle, J.
, Peckerar, M.
and Ma, M.
(1994),
The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures, Solid-State Electronics
(Accessed October 12, 2025)