Advanced Metrology Needs for Nanoelectronics Lithography

Published

October 1, 2006

Author(s)

Stephen Knight, Ronald Dixon, Ronald L. Jones, Eric Lin, Ndubuisi G. Orji, Richard M. Silver, Andras Vladar, Wen-li Wu

Abstract

The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features, significant advances have also been required to measure the printed features. In this article we will discuss the current state of the art in the metrology for measuring critical dimensions of printed features for scanning electron microscopy and atomic force microscopy, and describe work at the National Institute of Standards and Technology advancing these tools as well as exploratory work on two new promising techniques, scatterfield microscopy and small angle X-ray scatterometry.

Citation

Journal De Physique Iii

Volume

7

Issue

8

Pub Type

Journals

Keywords

atomic force microscopy, optical scatterfield microscopy, optical scatterometry, scanning electron, small ange x-ray scatterometry

Citation

Knight, S. , Dixon, R. , Jones, R. , Lin, E. , Orji, N. , Silver, R. , Vladar, A. and Wu, W. (2006), Advanced Metrology Needs for Nanoelectronics Lithography, Journal De Physique Iii (Accessed July 17, 2026)

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