Heavy Ion Induced Soft Breakdown of Thin Gate Oxides

J. F. Conley; John S. Suehle; A. H. Johnston; Bin Wang; T Miyahara; Eric M. Vogel; J B. Bernstein

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PUBLICATIONS

Heavy Ion Induced Soft Breakdown of Thin Gate Oxides

Published

December 1, 2001

Author(s)

J. F. Conley, John S. Suehle, A. H. Johnston, Bin Wang, T Miyahara, Eric M. Vogel, J B. Bernstein

Abstract

Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model.

Citation

IEEE Trans. on Nuclear Science

Volume

Issue

Pub Type

Journals

Keywords

silicon dioxide, reliability, radiation effects, soft breakdown, heavy ion irradiation, microelectronics

Citation

Conley, J. , Suehle, J. , Johnston, A. , Wang, B. , Miyahara, T. , Vogel, E. and Bernstein, J. (2001), Heavy Ion Induced Soft Breakdown of Thin Gate Oxides, IEEE Trans. on Nuclear Science (Accessed July 28, 2026)

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Created November 30, 2001, Updated October 12, 2021

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