Evaluation of Scanning Maxwell-Stress Microscopy for SPM-Based Nanoelectronics

Published

September 1, 1997

Author(s)

John A. Dagata

Abstract

A preliminary evaluation of the compatibility, spatial resolution, and sensitivity of scanning Maxwell-stress microscopy (SMM) as an in situ diagnostic technique for SPM oxidation of silicon is presented. These results indicate that SMM will provide us with a more detailed understanding of the reaction mechanism which occurs in the high field conditions at the tip-sample junction during SPM oxidation. SMM also appears to be a promising technique for simultaneously investigating dimensional and electrical properties of molecular distributions within highly complex micro-environments such as phase-separated polymer systems.

Proceedings Title

Program of the 4th Industrial Applications of Scanned Probe Microscopy; NIST, Gaithersburg, MD, 1997; and Nanotechnology 8: A3-A9, Special Issue, September 1997

Conference Location

Gaithersburg, MD

Pub Type

Conferences

Keywords

nanofabrication, phase-separated polymers, scanned probe microscopy, scanning Maxwell-stress microscopy

Citation

Dagata, J. (1997), Evaluation of Scanning Maxwell-Stress Microscopy for SPM-Based Nanoelectronics, Program of the 4th Industrial Applications of Scanned Probe Microscopy; NIST, Gaithersburg, MD, 1997; and Nanotechnology 8: A3-A9, Special Issue, September 1997, Gaithersburg, MD (Accessed October 20, 2025)