Sanabia, J.
(2001),
CF3I and C2Cl4 on Silicon Surfaces, CF3I and C2Cl4 on Silicon Surfaces
(Accessed March 12, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
CF3I and C2Cl4 on Silicon Surfaces
Published
Author(s)
J E. Sanabia
Abstract
The nature of chemisorbed CF3I and C2Cl4 on silicon surfaces has been studied using a variety of ultra-high vacuum surface-science techniques, including temperature-programmed desorption and electron-stimulated desorption. Thesticking coefficients for both CF3I and C2Cl4 on 370 K silicon surfaces are near unity. For the CF3I-Si system, SiFx species and I desorb in temperature-programmed desorption. No molecular CF3I desorbs. For the C2Cl4-Si system,SiCl2 desorbs in temperature-programmed desorption. No molecular C2Cl4 desorbs. Low-energy (Citation
CF3I and C2Cl4 on Silicon Surfaces
Pub Type
Others
Keywords
electron-stimulated desorption, silicon, silicon surfaces, ultra-high vacuum surface-science
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 1, 2001, Updated February 17, 2017