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Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results
Published
Author(s)
Chengqing C. Wang, J C. Roberts, Robert Bristol, B Bunday, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, John S. Villarrubia, Kwang-Woo Choi, James S. Clarke, Bryan J. Rice, Michael Leeson
Abstract
he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provides a potential route to characterize a variety of parameters related to line edge roughness by analyzing the diffracted intensity from a periodic array of test patterns. In this study, data from a series of photoresist line/space patterns featuring programmed line width roughness measured by critical dimension small angle x-ray scattering (CD-SAXS) is presented. For samples with periodic roughness, CD-SAXS provides the wavelength and amplitude of the periodic roughness through satellite diffraction peaks. In addition, the rate of decay of intensity, termed an effective Debye-Waller factor, as a function of scattering vector provides a measure of the fluctuation in line volume.CD-SAXS data are compared to analogous values obtained from CD-SEM. Correlations between the techniques exist, however significant differences are observed for the current samples. C-AFM data reveal large fluctuations in both line height and line width, providing a potential explanation for the observed disparity between CD-SEM and CD-SAXS.
line edge roughness, scatterometry, small angle x-ray scattering
Citation
Wang, C.
, Roberts, J.
, Bristol, R.
, Bunday, B.
, Jones, R.
, Lin, E.
, Wu, W.
, Villarrubia, J.
, Choi, K.
, Clarke, J.
, Rice, B.
and Leeson, M.
(2007),
Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results, SPIE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852720
(Accessed October 10, 2025)