Structural Characterization of Methylsilsequioxane-Based Porous Low-k Thin Films Using X-Ray Porosimetry

Published

June 1, 2003

Author(s)

Hae-Jeong Lee, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Eric K. Lin, Wen-Li Wu

Abstract

X-ray porosimetry is used to characterize structural characteristics, including pore size distribution, average density, wall density, and porosity, of methylsilsesquioxane based porous low-k dielectric films with varying porogen loading contents. When the porogen content varies from 1 % to 30 % by mass, porosities change from 12 % to 34 % and pore size with the largest population range from 10 to 15 in radius. The wall density is independent of the porogen content and it appears that some of the porogen remains in the wall material. These results are compared to complimentary data obtained from small angle neutron scattering, x-ray reflectivity, and ion beam scattering.

Proceedings Title

International Interconnect Technology Conference | 6th |

Conference Dates

June 1, 2003

Conference Title

Proceedings of the IEEE International Interconnect Technology Conference

Pub Type

Conferences

Keywords

pore size distribution, Porosimetry, porosity, porous low-K dielectric, small-angle neutron scat, x-ray reflectivity, x-ray relectivity

Citation

Lee, H. , Soles, C. , Liu, D. , Bauer, B. , Lin, E. and Wu, W. (2003), Structural Characterization of Methylsilsequioxane-Based Porous Low-k Thin Films Using X-Ray Porosimetry, International Interconnect Technology Conference | 6th | (Accessed October 1, 2025)