Depth Profiling Using C60+ SIMS Deposition and Topography Development During Bombardment of Silicon

Published

July 30, 2006

Author(s)

John G. Gillen, J Batteas, Chris A. Michaels, P Chi, John A. Small, Eric S. Windsor, Albert J. Fahey, Jennifer R. Verkouteren, W Kim

Abstract

A C60+ primary ion source has been coupled to an ion microscope SIMS instrument to examine sputtering of silicon with an emphasis on possible application of C60+ depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C60+ SIMS depth profiling of silicon was found to be complicated by the deposition of a uniform amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C60+ SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to conventional SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C60+ bombardment.

Citation

Applied Surface Science

Pub Type

Journals

Keywords

cluster bombardment, depth profiling, fullerene, ion source, secondary ion mass spectrometry

Citation

Gillen, J. , Batteas, J. , Michaels, C. , Chi, P. , Small, J. , Windsor, E. , Fahey, A. , Verkouteren, J. and Kim, W. (2006), Depth Profiling Using C₆₀+ SIMS Deposition and Topography Development During Bombardment of Silicon, Applied Surface Science (Accessed October 11, 2025)