Waclawski, B.
, Gadzuk, J.
and Herbst, J.
(1978),
UV Photoemission for Rare Gases Implanted in Ge, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620165 (Accessed May 3, 2026)
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UV Photoemission for Rare Gases Implanted in Ge
Published
Author(s)
B Waclawski, , J F. Herbst
Abstract
The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.Citation
Physical Review Letters
Volume
41
Issue
8
Pub Type
Journals
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Created August 21, 1978, Updated April 21, 2026