Suehle, J.
(2009),
Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides, CRC Press, Boca Raton, FL
(Accessed May 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides
Published
Author(s)
Abstract
This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical models for describing the failure distributions observed after TDDB experiments. Finally, recent developments in ultra-thin dielectric breakdown, including soft breakdown and the power-law voltage acceleration model will be discussed.Citation
Defects in Microelectronic Materials and Devices
Publisher Info
CRC Press, Boca Raton, FL
Pub Type
Books
Keywords
breakdown, CMOS, dielectric, reliability
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 14, 2009, Updated January 27, 2020