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Multivariant Measurement for Thin Film Adhesion as a Function of Temperature and Thin Film Thickness
Published
Author(s)
Martin Y. Chiang, R Song, Alamgir Karim, Eric J. Amis
Abstract
The next generation of electronic components will require new low-k dielectrics or other novel thin films in the sub-micron level to be integrated into their construction. In developing these new materials, it is important to assess the adhesion reliability between film and substrate in a fast, practical and reproducible fashion. This study is to develop a high-throughput multivariant (combinatorial) approach to the edge delamination test to map the interfacial failure of the film as a function of both temperature and film thickness in a single step to provide the information of adhesion reliability. A simulation result and an initial experimental observation are presented to demonstrate the feasibility of the approach. This approach provides a vehicle for combinatorial assessment of adhesion that can speed the pace of material innovations.
Proceedings Title
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show | | |
Chiang, M.
, Song, R.
, Karim, A.
and Amis, E.
(2003),
Multivariant Measurement for Thin Film Adhesion as a Function of Temperature and Thin Film Thickness, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show | | |, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852168
(Accessed October 8, 2025)