Characterization of SiGe Bulk Compositional Standards with Electron Probe Microanalysis

Published

September 1, 2003

Author(s)

Ryna B. Marinenko, J T. Armstrong, Shirley Turner, Eric B. Steel, F A. Stevie

Abstract

Bulk SiGe wafers cut from single-crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro- and macroheterogeneity for use as primary standards for future characterization of SiGe thin films on Si that are needed by the microelectronics industry as reference standards. Specimens with nominal compositions of 14 and 6.5 atomic % Ge were rigorously tested with wavelength dispersive spectrometers (WDS) using multiple point, multiple sample, and duplicate data acquisitions. The SiGe14 wafer will make a very good bulk reference material for microanalysis to evaluate SiGe thin films on Si.

Proceedings Title

Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP

Volume

683

Conference Dates

March 24-28, 2003

Conference Location

Austin, TX

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

Keywords

Electron Probe Microanalysis, EPMA, heterogeneity, homogeneity, micro-heterogeneity, reference standards, SiGe, Silicon-Germanium Technology

Citation

Marinenko, R. , Armstrong, J. , Turner, S. , Steel, E. and Stevie, F. (2003), Characterization of SiGe Bulk Compositional Standards with Electron Probe Microanalysis, Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP, Austin, TX (Accessed October 21, 2025)