NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Published
Author(s)
Hyun Wook Ro, Hae-Jeong Lee, Eric K. Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher L. Soles
Abstract
Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these materials, especially when they are highly porous, raises concerns about their physical integrity. We report the direct imprinting of 100 nm parallel line-space patterns into a high modulus poly(methylsilsesquioxane)-based organosilicate thin film that is capable, in its non-patterned form, of meeting the ultra-low dielectric constant requirement of k 2.3. Immediately after imprinting a (5 to 10) % shrinkage in the pattern height of the partially vitrified patterns relative to the mold is quantified using X-ray reflectivity.Nanoscopic pores with an average diameter of approximately 2.2 nm are then generated in the patterns at high temperatures, through the volatilization a second phase porogen, while the material simultaneously vitrifies into a glassy organosilicate network. Pattern shape changes upon vitrification are also quntified and indicating that a 12 % reduction in the pattern height of the porogen-loaded imprint is observed with very little change in the pattern width. For a imprint without the added porogen, the shrinkage is still anisotropic in the height direction, but reduced approximately by 4 %. Our results show that nanoporous low-k patterns can be replicated via nanoimprint lithography with very little loss in the pattern quality.
, H.
, Lee, H.
, Lin, E.
, Karim, A.
, Hines, D.
, Yoon, D.
and Soles, C.
(2008),
Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials, SPIE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852733
(Accessed October 9, 2025)