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SIM Comparison of DC Resistance Standards at 1 {Ω}, 1 M{Ω}, and 1 G{Ω}
Published
Author(s)
Dean G. Jarrett, Randolph E. Elmquist, Nien F. Zhang, Alejandra Tonina, M Porfiri, Janice Fernandes, H Schechter, Daniel Izquierdo, C Faverio, Daniel Slomovitz, Dave Inglis, Kai Wendler, Felipe Hernandez-Marquez, B Rodriguez
Abstract
A set of regional comparisons of dc resistance standards at the nominal values of 1 {Ω}, 1 M {Ω}, and 1 G {Ω} has recently been completed in the Sistema Interamericano de Metrogia (SIM) region. The motivation, design, standards, and results of these regional comparisons are reported. Resistance standards were characterized for drift rate, temperature coefficient, pressure coefficient, and voltage coefficient so participants would be able to measure the transport standards using procedures routinely used in their calibration services. Data showing the transport behavior of several of the standards are shown. Pilot and participant laboratory data sets were used to determine a linear regression for each transport standard. Comparison reference values are reported and each participants difference from the comparison reference value at each nominal value are reported at 1 {Ω}, 1 M {Ω}, and 1 G {Ω}. The linking of the regional comparison results at 1 {Ω} and 1 G {Ω} to bilateral and key comparison results is also reported. Degrees of equivalence for non-linking SIM laboratories are reported with respect to key comparison reference values.
Citation
IEEE Transactions on Instrumentation and Measurement
calibration and measurement capabilities, comparison reference value, key comparison, measurement, national metrology institute, standard resistor, uncertainty
Jarrett, D.
, Elmquist, R.
, Zhang, N.
, Tonina, A.
, Porfiri, M.
, Fernandes, J.
, Schechter, H.
, Izquierdo, D.
, Faverio, C.
, Slomovitz, D.
, Inglis, D.
, Wendler, K.
, Hernandez-Marquez, F.
and Rodriguez, B.
(2009),
SIM Comparison of DC Resistance Standards at 1 {Ω}, 1 M{Ω}, and 1 G{Ω}, IEEE Transactions on Instrumentation and Measurement, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33141
(Accessed October 10, 2025)