A New Interface Defect Spectroscopy Method

Published

April 12, 2011

Author(s)

Jason Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin Cheung, Fei Zhang, C Wang, Jason Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.

Proceedings Title

Proceedings of the IEEE International Reliability Physics Symposium

Conference Dates

April 10-14, 2011

Conference Location

Monterey, CA, US

Conference Title

IEEE International Reliability Physics Symposium

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/irps.2011.5784477

Local Download

Keywords

interface states, Pb centers, charge pumping

Citation

Ryan, J. , Yu, L. , Han, J. , Kopanski, J. , Cheung, K. , Zhang, F. , Wang, C. , Campbell, J. , Suehle, J. , Tilak, V. and Fronheiser, J. (2011), A New Interface Defect Spectroscopy Method, Proceedings of the IEEE International Reliability Physics Symposium, Monterey, CA, US, [online], https://doi.org/10.1109/irps.2011.5784477, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907880 (Accessed June 1, 2026)

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