TSOM Method for Semiconductor Metrology

Published

April 18, 2011

Author(s)

Ravikiran Attota, Ronald G. Dixson, John A. Kramar, James E. Potzick, Andras Vladar, Benjamin D. Bunday, Erik Novak, Andrew C. Rudack

Abstract

Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical microscopes; measurement sensitivities are comparable to what is typical using Scatterometry, SEM and AFM. TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated experimentally or through simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements, and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and, nanomanufacturing. TSOM is relatively simple and inexpensive, has high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

Proceedings Title

SPIE Advanced Lithography

Volume

7971

Conference Dates

February 28-March 3, 2011

Conference Location

San Jose, CA

Conference Title

Metrology Inspection and Process Control

Pub Type

Conferences

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Keywords

TSOM, through focus, optical microscope, nanometrology, process control, nanomanufacturing, nanoparticles, overlay metrology, critical dimension, defect analysis, dimensional analysis, MEMS, NEMS, photonics

Citation

Attota, R. , Dixson, R. , Kramar, J. , Potzick, J. , Vladar, A. , Bunday, B. , Novak, E. and Rudack, A. (2011), TSOM Method for Semiconductor Metrology, SPIE Advanced Lithography, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908177 (Accessed October 10, 2025)